| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GL550 | High speed infrared emitting diode | Sharp | Epoxy resin | 2 | -20°C | 85°C | 38 K |
| GL550 | High speed infrared emitting diode | Sharp | Resin | 2 | -20°C | 85°C | 38 K |
| GL551 | High speed infrared emitting diode | Sharp | Epoxy resin | 2 | -20°C | 85°C | 38 K |
| GL551 | High speed infrared emitting diode | Sharp | Resin | 2 | -20°C | 85°C | 38 K |
| K6L0908C2A-GL55 | 64K x 8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 143 K |
| K6T0808C1D-GL55 | 55ns, 32Kx8 bit low power CMOS static RAM | Samsung-Electronic | SOP | 28 | 0°C | 70°C | 170 K |
| K6T1008C2E-GL55 | 128Kx8 bit, 55ns low power CMOS static RAM | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 190 K |
| K6T4008C1B-GL55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, L-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 171 K |
| K6T4008C1C-GL55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, L-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 125 K |
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