| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL16V8D-10LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-10LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-10LS | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | SOIC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-10QJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-10QP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-3LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-5LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LS | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | SOIC | 20 | 0°C | 75°C | 316 K |
| 1 [2] [3] [4] |
|---|
