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H-10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IS61C256AH-10J32K x 8 high-speed CMOS static RAMdistributorSOJ280°C70°C60 K
IS61C256AH-10N32K x 8 high-speed CMOS static RAMdistributorPDIP280°C70°C60 K
IS61C256AH-10T32K x 8 high-speed CMOS static RAMdistributorTSOP280°C70°C60 K
LH5116H-10CMOS 16K (2K x 8)static RAMSharpDIP24-40°C85°C87 K
LH5164AH-10LCMOS 64K (8K x 8)static RAMSharpDIP28-40°C85°C105 K
LH5164AH-10LCMOS 64K (8K x 8)static RAMSharpDIP28-40°C85°C105 K
MD56V62160/H-10TA4-bank x 1,048,576-word x 16-bit synchronous dynamic RAMdistributorTSOP540°C70°C305 K
MH32D72KLH-102415919104-bit (33554432-word by 72-bit) double date rate synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1840°C70°C342 K
MH32D72KLH-102,415,919,104-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1840°C70°C348 K
MH64D72KLH-104831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1840°C70°C350 K
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