| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFH6N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 77 K |
| IXFH6N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 118 K |
| IXFH6N90 | 900V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 77 K |
| IXTH6N90 | 900V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 104 K |
| IXTH6N90A | 900V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 104 K |
| STH6N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STH6NA80FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 138 K |
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