| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB112N06T | 55 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 262 K |
| PHB11N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 105 K |
| PHB11N03LT | 30 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 107 K |
| PHB11N06LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 112 K |
| PHB11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
| PHB11N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT404 | 3 | -55°C | 175°C | 76 K |
| PHB11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 41 K |
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