Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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40HF10 | 100 V, 40 A, Power rectifier | distributor | DO | 2 | -65°C | 190°C | 558 K |
40HF100 | 1000 V, 40 A, Power rectifier | distributor | DO | 2 | -65°C | 190°C | 558 K |
40HF100M | 1000 V, 40 A, Power rectifier | distributor | DO | 2 | -65°C | 190°C | 558 K |
40HF10M | 100 V, 40 A, Power rectifier | distributor | DO | 2 | -65°C | 190°C | 558 K |
EHF10B1 | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 42 K |
EHF10Y1 | Center Tap | Microsemi-Corporation | SEE_FACTORY | - | - | - | 42 K |
EHF10Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 42 K |
HF10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
HF10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
HF100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
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