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IRF35

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF350Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14AInternational-Rectifier-3-55°C150°C144 K
IRF35113.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2Intersil-Corporation----59 K
IRF3515LHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.045 Ohm, ID = 41AInternational-Rectifier-3-55°C175°C126 K
IRF3515SHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.045 Ohm, ID = 41AInternational-RectifierDDPak3-55°C175°C126 K
IRF35213.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2Intersil-Corporation----59 K
IRF35313.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2Intersil-Corporation----59 K
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