Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFD110 | 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 52 K |
IRFD110 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A | International-Rectifier | - | 4 | -55°C | 175°C | 174 K |
IRFD120 | 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 52 K |
IRFD120 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A | International-Rectifier | - | 4 | -55°C | 175°C | 176 K |
IRFD1Z0 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
IRFD1Z1 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
IRFD1Z2 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
IRFD1Z3 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
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