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IRG4BC30W

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C139 K
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12AInternational-RectifierDDPak3-55°C150°C188 K
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