| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF520 | 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 69 K |
| IRF520 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 181 K |
| IRF520FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 181 K |
| IRF520FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 181 K |
| IRF520N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A | International-Rectifier | - | 3 | -55°C | 175°C | 116 K |
| IRF520NL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A | International-Rectifier | - | 3 | -55°C | 175°C | 185 K |
| IRF520NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 185 K |
| IRF520V | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A | International-Rectifier | - | 3 | -55°C | 175°C | 200 K |
| IRF520VL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A | International-Rectifier | - | 3 | -55°C | 175°C | 129 K |
| IRF520VS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 129 K |
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