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IRg4bc15

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC15MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5AInternational-Rectifier-3-55°C150°C256 K
IRG4BC15UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational-Rectifier-3-55°C150°C255 K
IRG4BC15UD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational-Rectifier-3-55°C150°C210 K
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational-RectifierDDPak3-55°C150°C210 K
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational-RectifierDDPak3-55°C150°C210 K
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