| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRG4BC20 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
| IRG4BC20FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 222 K |
| IRG4BC20FD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 222 K |
| IRG4BC20K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 138 K |
| IRG4BC20K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 162 K |
| IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 199 K |
| IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 222 K |
| IRG4BC20MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | International-Rectifier | - | 3 | -55°C | 150°C | 251 K |
| IRG4BC20MD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 200 K |
| IRG4BC20S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
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