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IRg4ph50

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PH50KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24AInternational-Rectifier-3-55°C150°C92 K
IRG4PH50KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24AInternational-Rectifier-3-55°C150°C224 K
IRG4PH50SInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33AInternational-Rectifier-3-55°C150°C130 K
IRG4PH50UInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24AInternational-Rectifier-3-55°C150°C134 K
IRG4PH50UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24AInternational-Rectifier-3-55°C150°C229 K
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