| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ201 | Silicon P channel field effect transistor for high power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 182 K |
| BUJ202AX | Silicon Diffused Power Transistor | Philips-Semiconductors | SOT186A | - | - | - | 21 K |
| BUJ204A | Silicon Diffused Power Transistor | Philips-Semiconductors | SOT78 | - | - | - | 103 K |
| BUJ204AX | Silicon Diffused Power Transistor | Philips-Semiconductors | SOT186A | - | - | - | 107 K |
| BUJ205A | Silicon Diffused Power Transistor | Philips-Semiconductors | - | - | - | - | 18 K |
| BUJ205AX | Silicon Diffused Power Transistor | Philips-Semiconductors | - | - | - | - | 21 K |
| SMAJ20A-TR | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| SMAJ20CA-TR | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| SMBJ20A-TR | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| SMBJ20CA-TR | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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