| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MT4C4001JC-10/IT | 1 meg x 4 DRAM fast page mode DRAM | distributor | DIP | 20 | -40°C | 85°C | 308 K |
| MT4C4001JC-12/IT | 1 meg x 4 DRAM fast page mode DRAM | distributor | DIP | 20 | -40°C | 85°C | 308 K |
| MT4C4001JC-8/IT | 1 meg x 4 DRAM fast page mode DRAM | distributor | DIP | 20 | -40°C | 85°C | 308 K |
| MT4C4001JC-8/IT | 1 meg x 4 DRAM fast page mode DRAM | distributor | DIP | 20 | -40°C | 85°C | 308 K |
| NX7660JC-BA | InGaAsP strained MQW DC-PBH laser diode module | NEC-Electronics-Inc- | - | - | - | - | 65 K |
| NX7660JC-CA | InGaAsP strained MQW DC-PBH laser diode module | NEC-Electronics-Inc- | - | - | - | - | 65 K |
| S-80748AN-JC-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80748AN-JC-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80748AN-JC-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80848ANNP-EJC-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
