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K4s281632

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4S281632B-NC/L1H2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=2), interface LVTTL,Samsung-ElectronicsTSOP(II)540°C70°C64 K
K4S281632B-NC/L1L2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicsTSOP(II)540°C70°C64 K
K4S281632F-TC60128Mb SDRAM, 3.3V, LVTTL, 166MHzSamsung-ElectronicTSOP540°C70°C145 K
K4S281632F-TC75128Mb SDRAM, 3.3V, LVTTL, 166MHzSamsung-ElectronicTSOP540°C70°C145 K
K4S281632F-TCL60128Mb SDRAM, 3.3V, LVTTL, 166MHzSamsung-ElectronicTSOP540°C70°C145 K
K4S281632F-TCL75128Mb SDRAM, 3.3V, LVTTL, 166MHzSamsung-ElectronicTSOP540°C70°C145 K
K4S281632M-TC/L102M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3)Samsung-ElectronicTSOP (II)540°C70°C87 K
K4S281632M-TC/L1H2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2)Samsung-ElectronicTSOP (II)540°C70°C87 K
K4S281632M-TC/L1L2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3)Samsung-ElectronicTSOP (II)540°C70°C87 K
K4S281632M-TC/L802M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3)Samsung-ElectronicTSOP (II)540°C70°C87 K
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