| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T4008V1C-GB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-GB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-MB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-MB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-VB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-VB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-YB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-YF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008V1C-YF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| 1 [2] |
|---|
