Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416C1204CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJ-5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416C1204CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJ-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416C1204CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJ-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416C1204CJ-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416C1204CJ-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
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