| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LET19060C | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 34 K |
| LET20030C | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 37 K |
| LET20030S | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 43 K |
| LET21004 | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 40 K |
| LET21008 | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 40 K |
| LET21030C | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 62 K |
| LET8180 | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 33 K |
| LET9002 | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 40 K |
| LET9006 | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 40 K |
| LET9045S | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 292 K |
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