| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EMD6N | Dual digital PNP/NPN transistor, general purpose | ROHM | UMT6 | 6 | - | - | 66 K |
| FMD6S | Single-phase glass passivated mini fast recovery surface mount bridge rectifier. Gurrent 0.8 Amp. VRRM = 800V, VRMS = 560V, VDC = 800V | distributor | - | 4 | -55°C | 150°C | 263 K |
| HFA100MD60C | HEXFRED | International-Rectifier | - | 3 | -55°C | 150°C | 309 K |
| IMD6A | Dual digital PNP/NPN transistor, general purpose | ROHM | SMT6 | 6 | - | - | 66 K |
| MD6S | Single-phase glass passivated mini silicon surface mount bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max Io=0.5A(on glass-epoxy PCB), Io=0.8A(on al. substr.) Ta=30degC. | distributor | - | 4 | -55°C | 150°C | 21 K |
| S21MD6T | Built-in zero-cross circuit phototriac coupler | Sharp | - | 5 | -30°C | 100°C | 56 K |
| ZXMD65P02N8TA | Dual 20 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SO | 8 | - | - | 65 K |
| ZXMD65P02N8TA | Dual 20 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SO | 8 | - | - | 65 K |
| ZXMD65P02N8TA | Dual 20 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SO | 8 | - | - | 65 K |
| ZXMD65P02N8TC | Dual 20 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SO | 8 | - | - | 65 K |
| ZXMD65P02N8TC | Dual 20 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SO | 8 | - | - | 65 K |
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