| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD5010M | Ultra high speed photo diode. Peak sensivity wavelength 850 nm. | distributor | Metal Can | 2 | -30°C | 100°C | 168 K |
| MTD502EF | 2 port 10M/100M switch with build_in memory | distributor | PQFP | 128 | -40°C | 125°C | 191 K |
| MTD502EG | 2 port 10M/100M switch with build_in memory | distributor | LQFP | 80 | -40°C | 125°C | 191 K |
| MTD516 | 16 port 10M/100M ethernet switch | distributor | PQFP | 208 | -40°C | 125°C | 257 K |
| MTD5P06E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 208 K |
| MTD5P06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 245 K |
| 1 |
|---|
