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MTP10N

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTP10N10ETMOS IV power field effect transistorMotorola-4-65°C150°C237 K
MTP10N10ELLogic level TMOS E-FET power field effect transistorMotorola-4-55°C150°C221 K
MTP10N40ETMOS E-FET high energy power FETMotorola-4-65°C150°C249 K
MTP10N40ETMOS E-FET high energy power FETMotorola-4-65°C150°C249 K
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