| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXDH30N120D1 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
| IXDT30N120D1 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
| MGV12N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 79 K |
| MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | Motorola | - | 3 | -55°C | 150°C | 250 K |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
| MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
| MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| MGY25N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 256 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
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