Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MGP15N35CL | Internally Clamped N-Channel IGBT | ON-Semiconductor | - | 3 | - | - | 99 K |
MGP15N38CL | Internally Clamped N-Channel IGBT | ON-Semiconductor | - | 3 | - | - | 71 K |
MGP15N40CL | Internally Clamped N-Channel IGBT | ON-Semiconductor | - | 3 | - | - | 100 K |
MGP15N43CL | Internally Clamped N-Channel IGBT | ON-Semiconductor | - | 3 | - | - | 70 K |
MGP15N60U | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
RFP15N15 | 15.0A, 120V and 150V, 0.150 ohm, N-Channel Power MOSFET FN1443.1 | Intersil-Corporation | - | - | - | - | 36 K |
STP15N05L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP15N05LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP15N06L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 196 K |
STP15N06LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 196 K |
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