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P3N60E

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTP3N60ETMOS E-FET high energy power FETMotorola-4-55°C150°C183 K
PHP3N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C79 K
PHP3N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsTO220AB3-55°C150°C80 K
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