| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP4N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 146 K |
| STP4N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP4N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP4N20 | N-CHANNEL 200V - 1.3 OHM - 4A TO-220 POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| STP4N20 | N-CHANNEL 200V - 1.3 OHM - 4A TO-220 POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| STP4NA100 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| STP4NA40 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 198 K |
| STP4NB100 | N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
| STP4NB100FP | N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
| 1 [2] [3] [4] [5] [6] [7] [8] |
|---|
