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P4N8

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQP4N80800V N-Channel MOSFETFairchild-Semiconductor----650 K
MGP4N80EInsulated gate bipolar transistorMotorola-3-55°C150°C124 K
MTP4N80ETMOS E-FET power field effect transistorMotorola-4-55°C150°C159 K
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