| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CXP86324 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 354 K |
| CXP86325 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 240 K |
| CXP86332 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 354 K |
| CXP86333 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 240 K |
| D2525P863 | Wavelength-selected isolated DFB laser module with PMF. ITU frequency 186.3. Wavelength 1609.19. Tolerance +-0.4nm. | distributor | Metal/ceramic butter | 14 | -40°C | 70°C | 261 K |
| D2587P863 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.3 THz. Center wavelength 1609.19 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P8635 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.35 THz. Center wavelength 1608.76 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P8635 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.35 THz. Center wavelength 1608.76 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| S3P863A | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | QFP | 44 | -40°C | 85°C | 169 K |
| S3P863A | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | SDIP | 42 | -40°C | 85°C | 169 K |
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