| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXGP8N100 | 1000V IGBT | distributor | - | 3 | -55°C | 150°C | 102 K |
| MTP8N06E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 212 K |
| MTP8N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 158 K |
| PHP8N20E | 200 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 59 K |
| PHP8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHP8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHP8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| RFP8N20L | 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
| STP8NA50 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
| STP8NA50FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
| STP8NC50 | N-CHANNEL 500V - 0.7 OHM - 8A - TO-220 POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
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