| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRG4PH40K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
| IRG4PH40K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
| IRGPH40F | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 255 K |
| IRGPH40FD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 425 K |
| IRGPH40M | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 84 K |
| IRGPH40MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 84 K |
| IRGPH40S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 82 K |
| MWS11-PH41-CS | WCDMA InGaP HBT Power Amplifier | Microsemi-Corporation | 16_PIN_MLP | - | - | - | 129 K |
| MWS11-PH43-CS | CDMA 2000 InGaP HBT Power Amplifier | Microsemi-Corporation | 16_PIN_MLP | - | - | - | 129 K |
| SBPH400-3 | IEEE1394 PHY LAYER S100 S200 S400 MBIT/S | SGS-Thomson-Microelectronics | - | - | - | - | 297 K |
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