| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HB52RF1289E2-75B | 128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM | distributor | - | 168 | - | - | 161 K |
| IRF121 | 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs | Intersil-Corporation | - | - | - | - | 68 K |
| IRF122 | 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs | Intersil-Corporation | - | - | - | - | 68 K |
| IRF123 | 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs | Intersil-Corporation | - | - | - | - | 68 K |
| PQ05RF12 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 40 K |
| PQ09RF12 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 40 K |
| QRF1210T30 | 1200V, 100A fast recovery common anode diode | distributor | - | - | - | - | 110 K |
| QRF1220T30 | 1200V, 200A fast recovery common anode diode | distributor | - | - | - | - | 112 K |
| QRF1230T30 | 1200V, 300A fast recovery common anode diode | distributor | - | - | - | - | 106 K |
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