| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ERF2110B1 | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 39 K |
| ERF2112B1 | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 39 K |
| ERF2116B1 | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 39 K |
| RF2114 | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 14 | -40°C | 85°C | 73 K |
| RF2114PCBA | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 14 | -40°C | 85°C | 73 K |
| RF2115L | High power UNF amplifier | RF-Micro-Devices-RFMD | QLCC | 16 | -40°C | 85°C | 101 K |
| RF2115LPCBA | High power UNF amplifier | RF-Micro-Devices-RFMD | QLCC | 16 | -40°C | 85°C | 101 K |
| RF2117 | High efficiency 400MHz amplifier | RF-Micro-Devices-RFMD | PSOP | 16 | -40°C | 85°C | 173 K |
| RF2119 | High efficiency 2V power amplifier | RF-Micro-Devices-RFMD | PSSOP | 16 | -40°C | 85°C | 82 K |
| RF2119PCBA | High efficiency 2V power amplifier | RF-Micro-Devices-RFMD | PSSOP | 16 | -40°C | 85°C | 82 K |
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