| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF830 | 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 56 K |
| IRF830 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 58 K |
| IRF830 | N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
| IRF830 | 500 V,power field effect transistor | distributor | - | 4 | -55°C | 150°C | 282 K |
| IRF830 | 500 V, 4.5 A, power field effect transistor | distributor | TO | 3 | -55°C | 150°C | 282 K |
| IRF830A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 108 K |
| IRF830AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 155 K |
| IRF830B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 888 K |
| IRF830S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A | International-Rectifier | - | 3 | -55°C | 150°C | 175 K |
| SRF830 | Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 150 K |
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