| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFI610B | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 660 K |
| IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFI620G | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 4 .1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFI624G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.4 A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
| IRFI630G | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 5.9 A | International-Rectifier | - | 3 | -55°C | 150°C | 176 K |
| IRFI634G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 0.45 Ohm, ID = 5.6 A | International-Rectifier | - | 3 | -55°C | 150°C | 297 K |
| IRFI640G | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 9.8 A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| IRFI644G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 0.28 Ohm, ID = 7.9 A | International-Rectifier | - | 3 | -55°C | 150°C | 174 K |
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