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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29FB800RV-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FB800RV-12CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FB800RV-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FT800RV-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FT800RV-12CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FT800RV-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M51008CRV-55X1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
M5M51008CRV-70H1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
M5M51008CRV-70X1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
M5M51008CRV-70X1048576-bit (131072-word by 8-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C87 K
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