| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 50S116T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 50S116T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 50S116T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| BAS116 | Low-leakage diode | Philips-Semiconductors | SOT23 | - | - | - | 52 K |
| BAS116 | Silicon low leakage diode | Infineon-formely-Siemens | - | 3 | - | - | 98 K |
| BAS116LT1 | Switching Diode | ON-Semiconductor | - | 3 | - | - | 63 K |
| S116S01 | SIR type SSR for medium power control | Sharp | Compact package | 4 | -45°C | 65°C | 69 K |
| S116S02 | SIR type SSR for medium power control | Sharp | Compact package | 4 | -45°C | 65°C | 69 K |
| SN65LVDS116DGG | 1:16 LVDS REPEATER | Texas-Instruments | DGG | 64 | - | - | 247 K |
| SN65LVDS116DGGR | 1:16 LVDS REPEATER | Texas-Instruments | DGG | 64 | - | - | 247 K |
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