| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB631 | PNP epitaxial planar silicon transistor, 100V/1A low frequency power amp application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 106 K |
| 2SB631K | PNP epitaxial planar silicon transistor, 120V/1A low frequency power amp application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 106 K |
| 2SB632 | PNP epitaxial planar silicon transistor, 25V/2A low frequency power amp application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 238 K |
| 2SB632K | PNP epitaxial planar silicon transistor, 35V/2A low frequency power amp application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 238 K |
| 2SB633 | 6Ampere PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 125 K |
| 2SB633 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| PSB63/08 | 800 V single phase rectifier bridge | distributor | - | 4 | -40°C | 150°C | 36 K |
| SB630 | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Ta = 75degC 6 A. | distributor | - | 2 | -50°C | 125°C | 89 K |
| SB630CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Ta = 75degC 6 A. | distributor | - | 3 | -50°C | 125°C | 91 K |
| SB630F | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 6 A. | distributor | - | 2 | -50°C | 125°C | 89 K |
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