| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASI2001 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI2003 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI2005 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI2010 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ISPLSI2032E-200LT44 | 200 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 173 K |
| ISPLSI2032E-200LT48 | 200 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 48 | 0°C | 70°C | 173 K |
| ISPLSI2032E-225LJ44 | 225 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 173 K |
| ISPLSI2032E-225LT44 | 225 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 173 K |
| ISPLSI2032E-225LT48 | 225 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 48 | 0°C | 70°C | 173 K |
| TSI200B1 | TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE | SGS-Thomson-Microelectronics | - | - | - | - | 173 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
