| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ASM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | -55°C | 125°C | 41 K |
| 28C256ASM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -55°C | 125°C | 41 K |
| 28C64ASM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | -55°C | 125°C | 42 K |
| 28C64ASM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -55°C | 125°C | 42 K |
| 28LV256SM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | -55°C | 125°C | 41 K |
| 28LV256SM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -55°C | 125°C | 41 K |
| 28LV64SM-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | -55°C | 125°C | 42 K |
| 28LV64SM-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -55°C | 125°C | 42 K |
| X20C16SM-45 | 16K (2K x 8bit) high-speed autostore NOVRAM | distributor | SOIC28 | 28 | -55°C | 125°C | 94 K |
| X28VC256SM-45 | 256K (32K x 8bit) 5 volt, byte alterable E2PROM | distributor | SOIC28P | 28 | -55°C | 125°C | 109 K |
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