| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STH60N10 | Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 246 K |
| STH60N10FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 246 K |
| STH6N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STH6NA80FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 138 K |
| 1 |
|---|
