| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KTB2510 | PNP transistor for high power amplifier darlington applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 300 K |
| KTB2955 | PNP transistor for high power amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 267 K |
| MTB23P06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 249 K |
| MTB29N15E | TMOS E-FET power field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | 76 K |
| PTB23006U | Microwave power transistor | Philips-Semiconductors | SOT440 | - | - | - | 88 K |
| STB20NE06L | N-CHANNEL 60V - 0.06 OHM - 20A TO-263 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
| STB22NE03L | N-CHANNEL 30V - 0.034 OHM - 22A TO-263 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 49 K |
| STB24NF10 | N-CHANNEL 100V - 0.07 OHM -24A TO-263 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 48 K |
| UPTB24 | Transient Voltage Suppressor | Microsemi-Corporation | POWERMITE | - | - | - | 156 K |
| UPTB28 | Transient Voltage Suppressor | Microsemi-Corporation | POWERMITE | - | - | - | 156 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
