| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KTD998 | NPN transistor for high power amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 278 K |
| MBM29DL321TD90PBT | CMOS 32M (4M x 8/2M x16) bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 57 | -40°C | 85°C | 1 M |
| MBM29DL321TD90PFTN | CMOS 32M (4M x 8/2M x16) bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL321TD90PFTR | CMOS 32M (4M x 8/2M x16) bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL322TD90PBT | CMOS 32M (4M x 8/2M x16) bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 57 | -40°C | 85°C | 1 M |
| MBM29DL322TD90PFTN | CMOS 32M (4M x 8/2M x16) bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL322TD90PFTR | CMOS 32M (4M x 8/2M x16) bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MTD9N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 257 K |
| STD9N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 129 K |
| STD9N10L | N-CHANNEL 100V - 0.22 OHM - 9A IPAK/DPAK POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
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