| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE106 | Silicon PNP transistor. Switching transistor. | distributor | - | 3 | -65°C | 200°C | 24 K |
| NTE1060 | Integrated circuit AM-RF amp, Mix/OSC, FM-AM amp. | distributor | - | 16 | -20°C | 75°C | 18 K |
| TE106R | 600 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 132 K |
| TE106R | 600 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 132 K |
| TE106RS | 600 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 133 K |
| TE106RS | 600 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 133 K |
| TE106RS | 600 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 133 K |
| VTE1063 | GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm. | distributor | - | 2 | -55°C | 125°C | 32 K |
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