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TF-12

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM100TF-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C56 K
CM100TF-12H600V, 100A six pac IGBT moduledistributor----66 K
CM150TF-12H150 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C53 K
CM150TF-12H600V, 150A six pac IGBT moduledistributor----63 K
CM15TF-12H15 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-14-40°C150°C50 K
CM15TF-12H600V, 15A six pac IGBT moduledistributor----61 K
CM20TF-12H20 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-14-40°C150°C50 K
CM30TF-12H30 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-14-40°C150°C53 K
CM50TF-12H50 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-14-40°C150°C49 K
CM75TF-12H75 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C56 K
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