Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612C-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 884 K |
K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612C-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 884 K |
K4F641612B-TL60 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 844 K |
K4F661612B-TL60 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 844 K |
K4S641632F-TL60 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
K4S643232C-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
K4S643232E-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232F-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
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