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TP-10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2V64S20BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C655 K
M2V64S20BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C655 K
M2V64S30BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C655 K
M2V64S30BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C655 K
M2V64S40BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C655 K
M2V64S40BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C655 K
M5M51016BTP-10L1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C82 K
M5M51016BTP-10LL1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C82 K
M5M532R16JTP-10524288-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ440°C70°C74 K
M5M5V32R16JTP-1016-bit static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ440°C70°C74 K
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