| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP2N120BN | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTP2N120BND | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 89 K |
| HGTP2N120CND | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 92 K |
| STP2N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP2N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP2N80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP2N80FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP2NA50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| STP2NA50FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
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