Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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APU0063QE-TY | 0.3-7 V, 80 CH driver for dot matrix LCD | distributor | QFP | 100 | -30°C | 85°C | 111 K |
MSU001 | 2.4-6V 20 voice SMART | Mosel-Vitelic | - | 71 | - | - | 127 K |
MSU001T | 2.4-6V 20 voice SMART | Mosel-Vitelic | - | 71 | - | - | 127 K |
TVU001 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
TVU002 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
TVU004 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
VI-QU00-XXX | InputV:90-132/180-264Vac; outputV:5V; 150-600W; 30-120A autoranging AC-DC switcher | distributor | - | 16 | - | - | 208 K |
VI-QU00-XXX | InputV:90-132/180-264Vac; outputV:5V; 150-600W; 30-120A autoranging AC-DC switcher | distributor | - | 16 | - | - | 208 K |
VI-RU00X-XXXX | Input Voltage:90-132/180-264Vac; output Voltage:20-95V; 150-600W; 30-120A autoranging AC-DC switcher | distributor | - | 16 | - | - | 208 K |
W4NRD8C-U000 | Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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