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UT7

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUT70HIGH POWER NPN SILICON TRANSISTORSGS-Thomson-Microelectronics----62 K
BUT70WHIGH VOLTAGE NPN POWER TRANSISTORSGS-Thomson-Microelectronics----45 K
UT7Q512512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.distributorFlatPack32--15 K
UT7Q512512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.distributorFlatPack32--15 K
UT7Q512K-UCA512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.distributorCeramic flatpack32-55°C125°C107 K
UT7Q512K-UCA512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.distributorCeramic flatpack32-55°C125°C107 K
UT7Q512K-UCC512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.distributorCeramic flatpack32-55°C125°C107 K
UT7Q512K-UCX512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.distributorCeramic flatpack32-55°C125°C107 K
V54C3256164VBUT7PC256Mbit (16M x 16) SDRAM, LVTTL, ultra low power, 7nsMosel-VitelicTSOP540°C70°C651 K
W49F002UT70B256K*8 CMOS flash memoryWinbond-ElectronicsTSOP32320°C70°C303 K
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