Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AVD150 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 3 | -65°C | 250°C | 18 K |
HVD131 | High frequency antenna switching diode | distributor | UFP | - | - | - | 22 K |
HVD132 | High frequency antenna switching diode | distributor | UFP | - | - | - | 23 K |
PVD1352 | BOSFET photovoltaic relay | International-Rectifier | DIP | 8 | -40°C | 85°C | 311 K |
PVD1354 | BOSFET photovoltaic relay | International-Rectifier | DIP | 8 | -40°C | 85°C | 311 K |
RN5VD10AA-TR | Voltage detector with output delay. Detector threshold 1.0V. Output type Nch open drain. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 198 K |
SVD101 | Hyperabrupt junction type GaAs varactor diode, X band VCO, PLO | SANYO-Electric-Co--Ltd- | 1274 | 2 | - | - | 71 K |
UC3843BVD1R2 | High Performance Current Mode Controller | ON-Semiconductor | SOIC | 8 | - | - | 401 K |
UC3844BVD1R2 | High Performance Current Mode Controller | ON-Semiconductor | SOIC | 8 | - | - | 433 K |
UC3845BVD1R2 | High Performance Current Mode Controller | ON-Semiconductor | SOIC | 8 | - | - | 433 K |
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